DESCRIPTION

SHARP’s LH28F800SG Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. LH28F800SG can operate at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realize longer battery life and suits for cellular phone application.

FEATURES

• SmartVoltage technology

– 3.0 V or 5 V VCC

– 3.0 V, 5 V or 12 V VPP

• High-performance

– 70 ns (5 V VCC) read access time

– 100 ns (2.7 V VCC) read access time

• Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

– Block erase/write lockout during power transitions

• Industry standard packaging

– 48-pin TSOP

– 44-Pin PSOP

• Chip size packaging

– 48-ball CSP

• SRAM-compatible write interface

• High-density symmetrically blocked architecture

– Sixteen 32K-word erasable blocks

• Extended cycling capability

– 100,000 block erase cycles

– 1.6 million block erase cycles/device

• Low power management

– Deep power-down mode

– Automatic power savings mode

– Decreases ICC in static mode

• Automated word write and block erase

– Command user interface

– Status register

• ETOX™ V nonvolatile flash technology

• Not designed or rated as radiation hardened