DESCRIPTION

The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application.

FEATURES

• SmartVoltage technology

– 2.7 V, 3.3 V or 5 V VCC

– 2.7 V, 3.3 V, 5 V or 12 V VPP

• High performance read access time LH28F800SG-L70/SGH-L70

– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/

85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)

LH28F800SG-L10/SGH-L10

– 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/

120 ns (2.7 to 3.0 V)

• Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

– Block erase/word write lockout during power transitions

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture

– Sixteen 32 k-word erasable blocks

• Enhanced cycling capability

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC in static mode

• Automated word write and block erase

– Command user interface

– Status register

• ETOXTM∗ V nonvolatile flash technology

• Packages

– 48-pin TSOP TypeI (TSOP048-P-1220)

Normal bend/Reverse bend

– 48-ball CSP(FBGA048-P-0808)