INTRODUCTION

Sharp’s LH28F004SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F004SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• 512K × 8 Word Configuration

• 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)

– No Requirement For DC/DC Converter To Write/Erase

• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)

• Minimum 2.7 V Read Capability

– 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C)

– 180 ns Maximum Access Time (VCC = 2.7 V, 0°C to +70°C)

• 32 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Interface

– Status Register

– RY»/BY» Status Output

• System Performance Enhancement

– Erase Suspend For Read

– Two-Byte Write

– Full Chip Erase

• Data Protection

– Hardware Erase/Write Lockout During Power Transitions

– Software Erase/Write Lockout

• Independently Lockable For Write/Erase On Each Block (Lock Block and Protect Set/Reset)

• 4 µA (Typ.) ICC In CMOS Standby

• 0.2 µA (Typ.) Deep Power-Down

• State-of-the-Art 0.45 µm ETOX™ Flash Technology

• Extended Temperature Operation

– -20°C to +85°C (Read)

– +15°C to +35°C (Write/Erase)

• 42-pin, 0.67 mm × 8 mm × 8 mm CSP Package