INTRODUCTION

Sharp’s LH28F004SU-LC 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities. 3.3 V low power operation and very high read/write performance, the LH28F004SU-LC is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• 512K × 8 Word Configuration

• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)

– No Requirement for DC/DC Converter to Write/Erase

• 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)

• Min. 2.7 V Read Capability

– 160 ns Maximum Access Time (VCC = 2.7 V)

• 32 Independently Lockable Blocks

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Inferface

– Status Register

– RY»/BY» Status Output

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

• Data Protection

– Hardware Erase/Write Lockout during Power Transitions

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)

• 4 µA (Typ.) ICC in CMOS Standby

• 0.2 µA (Typ.) Deep Power-Down

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• Extended Temperature Operation Available

– -40°C to +85°C

• 40-Pin, 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package