Features

⚫ High ruggedness

⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V

⚫ Low Gate Charge (Typ 188nC)

⚫ Improved dv/dt Capability

⚫ 100 Avalanche Tested

⚫ Application: Solar/PV inverter、Servicer、

Telecom、PC power、UPS、EV-charger

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.