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SWP640中文资料
SWP640数据手册规格书PDF详情
General Description
This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
Features
N-Channel MOSFET
BVDSS(Minimum) : 200 V
RDS(ON)(Maximum) : 0.18 ohm
ID : 18A
Qg (Typical) : 40 nc
PD(@TC=25) : 139 W
SWP640产品属性
- 类型
描述
- 型号
SWP640
- 制造商
SEMIPOWER
- 制造商全称
SEMIPOWER
- 功能描述
N-channel MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMWIN |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
|||
SAMWIN |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Samwin(芯派) |
23+ |
TO-220 |
211 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
|||
Sage Millmeter |
24+ |
模块 |
400 |
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