General Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.

Features

■ High ruggedness

■ RDS(ON) (Max 0.008 Ω)@VGS=10V

■ Gate Charge (Typ 146nC)

■ Improved dv/dt Capability

■ 100 Avalanche Tested