Features

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High ruggedness

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Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V

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Low Gate Charge (Typ 15.4nC)

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Improved dv/dt Capability

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100 Avalanche Tested

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Application:DC-DC Converter, Inverter, Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.