Features

 High ruggedness

 Low RDS(ON) (Typ 0.8Ω)@VGS=10V

 Low Gate Charge (Typ 18nC)

 Improved dv/dt Capability

 100 Avalanche Tested

 Application: LED,Charge, Adaptor

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.