位置:LE28F4001R-20 > LE28F4001R-20详情

LE28F4001R-20中文资料

厂家型号

LE28F4001R-20

文件大小

219.23Kbytes

页面数量

14

功能描述

4 MEG (524288 words x 8 bits) Flash Memory

4 MEG(524288 words x 8 bits) Flash Memory

数据手册

下载地址一下载地址二

生产厂商

SANYO

LE28F4001R-20数据手册规格书PDF详情

Overview

The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting.

Features

• Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.

• Read and write operation from a 5 V single-voltage power supply

• Sector erase function: 256 bytes per sector

• Fast access time: 150/200 ns

• Low power

— Operating current (read): 25 mA (maximum)

— Standby current: 20 µA (maximum)

• Highly reliable read and write operations

— Sector write cycles: 104 cycles

— Data retention time: 10 years

• Address and data latches

• Self-timer erase and programming

• Byte programming time: 35 µs (maximum)

• Write complete detection: Toggle bit and data polling

• Hardware and software data protection

• Pin assignment conforms to the JEDEC byte-wide EEPROM standard

• Packages

SOP 32-pin (525 mil) plastic package :LE28F4001M

TSOP 40-pin (10 × 14 mm) plastic package:LE28F4001T

TSOP 40-pin (10 × 14 mm) plastic package:LE28F4001R

LE28F4001R-20产品属性

  • 类型

    描述

  • 型号

    LE28F4001R-20

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    4 MEG(524288 words x 8 bits) Flash Memory

更新时间:2025-12-1 16:03:00
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