NPN Epitaxial Planar Silicon Transistor

Features

• Adoption of MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• Narrow hFE range .

• Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm).

• High allowable power dissipation.

Applications

• Relay drivers, lamp drivers, motor drivers, strobes.