Features

• Built-in IGBT and diode bridge of partial switching PFC

circuit Enable to reduce mounting area

• Low saturation voltage IGBT VCE(sat) = 1.7V max

• Low saturation voltage diode bridge VF = 1.1V max

• The clip lead is adopted for inner lead.

Low inductance, low resistance, high current capability

The smoke generation and explosion are less likely

to occur in case of destruction.

Applications

• Partial switching PFC