GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.

FEATURES

•Voltage Supply

- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V

- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V

•Organization

- Memory Cell Array : (512M + 16M) x 8bit

- Data Register : (2K + 64) x 8bit

•Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (256K + 8K)Byte

•Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 60µs(Max.)

- Serial Access : 30ns(Min.)

•Memory Cell : 2bit / Memory Cell

512M x 8 Bit / 1G x 8 Bit NAND Flash Memory

•Fast Write Cycle Time

- Program time : 800µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

•Command/Address/Data Multiplexed I/O Port

•Hardware Data Protection

- Program/Erase Lockout During Power Transitions

•Reliable CMOS Floating-Gate Technology

- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)

- Data Retention : 10 Years

•Command Register Operation

•Unique ID for Copyright Protection

•Package :

- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)

- K9G4G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9L8G08U1A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9G4G08B0A : MCP(TBD)