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K9F5608Q0C-DIB0中文资料
K9F5608Q0C-DIB0数据手册规格书PDF详情
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even thewrite intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
K9F5608Q0C-DIB0产品属性
- 类型
描述
- 型号
K9F5608Q0C-DIB0
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb/256Mb 1.8V NAND Flash Errata
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SAMSUNG |
2016+ |
FBGA |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG/三星 |
0440+ |
FBGA |
421 |
原装正品现货,可开发票,假一赔十 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG/三星 |
21+ |
FBGA |
10000 |
原装现货假一罚十 |
|||
SAMSUNG/三星 |
22+ |
BGA9*11 |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
FBGA |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
SAMSUNG/三星 |
23+ |
BGA911 |
89630 |
当天发货全新原装现货 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
421 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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K9F5608Q0C-DIB0 芯片相关型号
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- VI-J20MM
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SAMSUNG相关芯片制造商
Datasheet数据表PDF页码索引
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