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K9F4G08U0M中文资料

厂家型号

K9F4G08U0M

文件大小

1076.98Kbytes

页面数量

41

功能描述

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K9F4G08U0M数据手册规格书PDF详情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (512M + 16,384K)bit x 8bit

- Data Register : (2K + 64)bit x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 20µs(Max.)

- Serial Access : 25ns(Min.)

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

K9F4G08U0M产品属性

  • 类型

    描述

  • 型号

    K9F4G08U0M

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512M x 8 Bits/1G x 8 Bits NAND Flash Memory

更新时间:2026-2-20 14:13:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
存储器
TSOP
42044
SAMSUNG存储芯片K9F4G08U0M-PIB0即刻询购立享优惠#长期有货
SAMSUNG
13+/14+
TSOP48
10000
全新原装
SAMSUNG
24+
TSOP48
6525
绝对原装现货,价格低,欢迎询购!
SAMSUNG
2021+
TSOP48
6800
原厂原装,欢迎咨询
SAMSUNG
26+
TSOP48
360000
原装现货
SAMSUNG
24+
TSOP
48650
专做SAMSUNG系类,全新原装现货
SAMSUNG/三星
25+
BGA
10000
全新、原装
SAMSUNG/三星
2025+
TSOP
5000
原装进口价格优 请找坤融电子!
SAMSUNG(三星)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG(三星)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。