位置:K9F2G08U0A-I > K9F2G08U0A-I详情

K9F2G08U0A-I中文资料

厂家型号

K9F2G08U0A-I

文件大小

999.07Kbytes

页面数量

44

功能描述

FLASH MEMORY

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K9F2G08U0A-I数据手册规格书PDF详情

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 1.65V ~ 1.95V

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25µs(Max.)

- Serial Access : 25ns(Min.)

(*K9F2G08R0A: tRC = 42ns(Min))

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE

63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)

- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

K9F2G08U0A-I产品属性

  • 类型

    描述

  • 型号

    K9F2G08U0A-I

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    FLASH MEMORY

更新时间:2025-11-2 14:16:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
24+
LGA53
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
23+
LGA53
8560
受权代理!全新原装现货特价热卖!
SAMSUNG
0749+
LGA53
479
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
23+
LGA53
529
全新原装正品现货,支持订货
SAMSUNG/三星
2450+
UBGA
6540
原装现货或订发货1-2周
SAMSUNG/三星
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAMSUNG/三星
23+
ULGA52
89630
当天发货全新原装现货
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
23+
N/A
2509
原厂原装正品
SAMSUNG
24+
N/A
5000
全新原装正品,现货销售