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K9F2G08R0A中文资料
K9F2G08R0A数据手册规格书PDF详情
GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
K9F2G08R0A产品属性
- 类型
描述
- 型号
K9F2G08R0A
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
FLASH MEMORY
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
存储器 |
BGA |
42035 |
SAMSUNG存储芯片K9F2G08R0A-JCB0即刻询购立享优惠#长期有货 |
|||
SAMSUNG/三星 |
22+ |
BGA |
9565 |
||||
SAMSUNG/三星 |
25+ |
FBGA |
13800 |
原装,请咨询 |
|||
SAMSUNG |
25+ |
FBGA63 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SAMSUNG |
2021+ |
BGA |
6800 |
原厂原装,欢迎咨询 |
|||
SAMSUNG |
24+ |
FBGA |
45600 |
专做SAMSUNG系类,全新原装现货 |
|||
SAMSUNG |
24+ |
BGA |
5190 |
绝对原装现货,价格低,欢迎询购! |
|||
SAMSUNG/三星 |
23+ |
FBGA |
98900 |
原厂原装正品现货!! |
|||
SAMSUNG/三星 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
SAMSUNG/三星 |
24+ |
BGA |
2440 |
只做原厂渠道 可追溯货源 |
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