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K8A1215ETC中文资料
K8A1215ETC数据手册规格书PDF详情
GENERAL DESCRIPTION
The K8A(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory architecture of the device is designed to divide its memory arrays into 512blocks(Uniform block part)/515blocks(Boot block part) with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8A(10/11/12/13)15E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Regarding read access time, the K8A10/1215E provides an 11ns burst access time and an 95ns initial access time at 66MHz.
FEATURES
• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization
- 33,554,432 x 16 bit (Word Mode Only)
• Read While Program/Erase Operation
• Multiple Bank Architecture
- 16 Banks (32Mb Partition)
• OTP Block : Extra 512-Word block
• Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 100ns
- Synchronous Random Access Time :95ns
- Burst Access Time :
11ns(66Mhz) / 9ns(83Mhz) / 7ns (108MHz) / 6ns (133MHz)
• Page Mode Operation
16Words Page access allows fast asynchronous read Page Read Access Time :
18ns(66/83Mhz) / 15ns(108/133Mhz)
• Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with Wrap
• Block Architecture
- Uniform block part (K8A(10/11/12/13)15EZC) :
Five hundred twelve 64Kword blocks
- Boot block part (K8A(10/11/12/13)15ET(B)C) :
Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0 contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~ Bank 15 contain four hundred eighty 64Kword blocks)
• Reduce program time using the VPP
• Support 512-word Buffer Program
• Power Consumption (Typical value, CL=30pF)
- Synchronous Read Current : 35mA
- Program/Erase Current : 25mA
- Read While Program/Erase Current : 45mA
- Standby Mode/Auto Sleep Mode : 30uA
• Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=VIL
(Boot block part : K8A(10/11/12/13)15ET(B)C)
- Last one block (BA511) is protected by WP=VIL
(Uniform block part : K8A(10/11/12/13)15EZC)
- All blocks are protected by VPP=VIL
• Handshaking Feature
- Provides host system with minimum latency by monitoring RDY
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program/Erase
• Hardware Reset (RESET)
• Deep Power Down Mode
• Data Polling and Toggle Bits
- Provides a software method of detecting the status of program or erase completion
• Endurance
- 100K Program/Erase Cycles Minimum
• Extended Temperature : -25°C ~ 85°C
• Support Common Flash Memory Interface
• Output Driver Control by Configuration Register
• Low Vcc Write Inhibit
• Package : TBD
K8A1215ETC产品属性
- 类型
描述
- 型号
K8A1215ETC
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb C-die NOR FLASH
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东 |
23+ |
TO-220F |
8000 |
只做原装现货 |
|||
12 |
24+ |
TO-220F |
7500 |
原装现货假一赔十 |
|||
12 |
23+ |
TO-220F |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TOS进口原 |
17+ |
TO-220F |
6200 |
||||
TOSHIBA |
2020+ |
TO-220F |
100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TOSHIBA |
18+ |
TO220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
TOSHIBA |
21+ |
TO-220F |
12588 |
原装正品,自己库存 假一罚十 |
|||
TOSHIBA/东芝 |
18+ |
TO-220F |
37315 |
全新原装现货,可出样品,可开增值税发票 |
|||
TOSHIBA |
1213 |
TO-220F |
6000 |
绝对原装自己现货 |
|||
TOSHIBA/东芝 |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
K8A1215ETC 资料下载更多...
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Samsung semiconductor 三星半导体
三星半导体(Samsung semiconductor)是全球领先的半导体制造商之一,成立于1983年,总部位于韩国首尔。作为三星集团旗下的半导体业务部门,三星半导体致力于为客户提供高品质、高性能、高可靠性的半导体产品和解决方案,涵盖存储器、系统LSI、芯片等领域。 三星半导体拥有先进的生产设备和技术,以及一支专业的研发团队,能够为客户提供定制化的半导体解决方案。公司的产品广泛应用于电子、通信、计算机、汽车、医疗等领域,为客户提供高效、可靠、安全的半导体产品和服务。 作为全球领先的半导体制造商,三星半导体一直处于技术创新的前沿。公司不断投入研发,推出了一系列领先的半导体产品和解决方案,如高速存