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K7A803600B中文资料
K7A803600B数据手册规格书PDF详情
GENERAL DESCRIPTION
The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A
• Operating in commeical and industrial temperature range.
K7A803600B产品属性
- 类型
描述
- 型号
K7A803600B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256Kx36 & 512Kx18 Synchronous SRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
TQFP100 |
32360 |
SAMSUNG/三星全新特价K7A803600B-PC16即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
24+ |
TQFP100 |
48650 |
专做SAMSUNG系类,全新原装现货 |
|||
SAMSUNG |
26+ |
TQFP |
360000 |
原装现货 |
|||
SAMSUNG/三星 |
2025+ |
TQFP-100 |
5000 |
原装进口价格优 请找坤融电子! |
|||
SAMSUNG |
23+ |
TQFP |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
SAMSUNG |
24+ |
QFP |
30617 |
三星闪存专营品牌店全新原装热卖 |
|||
SAMSUNG |
23+ |
TQFP100 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
23+ |
QFP |
65480 |
||||
SAMSUNG |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
SAMSUNG |
17+ |
LQFP-100 |
6200 |
100%原装正品现货 |
K7A803600B 资料下载更多...
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SAMSUNG相关芯片制造商
Datasheet数据表PDF页码索引
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