GENERAL DESCRIPTION

The K6R4016V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 TBGA.

FEATURES

• Fast Access Time 8,10ns(Max.)

• Low Power Dissipation

Standby (TTL) : 20mA(Max.)

(CMOS) : 5mA(Max.)

1.2mA(Max.)L-Ver. only.

Operating K6R4016V1D-08 : 80mA(Max.)

K6R4016V1D-10 : 65mA(Max.)

• Single 3.3 ±0.3V Power Supply

• TTL Compatible Inputs and Outputs

• Fully Static Operation

- No Clock or Refresh required

• Three State Outputs

• 2V Minimum Data Retention: L-Ver. only.

• Center Power/Ground Pin Configuration

• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16

• Standard Pin Configuration

K6R4016V1D-J : 44-SOJ-400

K6R4016V1D-T : 44-TSOP2-400BF

K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)

• Operating in Commercial and Industrial Temperature range.