位置:K4X51163PC-FGC3 > K4X51163PC-FGC3详情
K4X51163PC-FGC3中文资料
K4X51163PC-FGC3数据手册规格书PDF详情
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• 1 /CS
• 1 CKE
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle
- 7.8us for -25 to 85 °C
K4X51163PC-FGC3产品属性
- 类型
描述
- 型号
K4X51163PC-FGC3
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
32M x16 Mobile-DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
存储器 |
FBGA |
40419 |
SAMSUNG存储芯片K4X51163PC-FGC3即刻询购立享优惠#长期有货 |
|||
Samsung |
23+ |
BGA |
8600 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
2021+ |
BGA |
6800 |
原厂原装,欢迎咨询 |
|||
Samsung |
24+ |
BGA |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
SAMSUNG |
24+ |
FBGA |
48650 |
专做SAMSUNG系类,全新原装现货 |
|||
Samsung |
16+ |
BGA |
4000 |
进口原装现货/价格优势! |
|||
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
SAMSUNG |
07+ |
BGA |
1 |
||||
SAMSUNG |
23+ |
FBGA60 |
5000 |
原装正品,假一罚十 |
|||
SAMSUNG |
24+ |
BGA |
25 |
K4X51163PC-FGC3 资料下载更多...
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SAMSUNG相关芯片制造商
Datasheet数据表PDF页码索引
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