位置:K4H511638D-TCB0 > K4H511638D-TCB0详情

K4H511638D-TCB0中文资料

厂家型号

K4H511638D-TCB0

文件大小

669.27Kbytes

页面数量

53

功能描述

128Mb DDR SDRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K4H511638D-TCB0数据手册规格书PDF详情

Features

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency 2, 2.5 (clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

• LDM,UDM/DM for write masking only

• Auto & Self refresh

• 15.6us refresh interval(4K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II package

K4H511638D-TCB0产品属性

  • 类型

    描述

  • 型号

    K4H511638D-TCB0

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

更新时间:2025-10-11 16:06:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2
全新原装 货期两周
SAMSUNG
25+
TSOP
2789
原装优势!绝对公司现货!
SAMSUNG
25+
TSSOP-66
4650
SAMSUNG
TSOP
140
正品原装--自家现货-实单可谈
SAMSUNG
25+
标准封装
18000
原厂直接发货进口原装
SAMSUNG
17+
TSOP
6200
100%原装正品现货
SAMSUNG
24+
TSOP
162
SAMSUNG
24+
TSOP
400
原装现货假一罚十
SAMSUNG
23+
TSSOP
5000
原装正品,假一罚十
SAMSUNG
2016+
TSOP
2500
只做原装,假一罚十,公司可开17%增值税发票!