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K4G41325FE-HC25中文资料
K4G41325FE-HC25数据手册规格书PDF详情
1. FEATURES
• 1.5V + 0.045V power supply for device operations(VDD)
(Specific parts support 1.35V + 0.0405V)
• 1.5V + 0.045V power supply for I/O interface(VDDQ)
(Specific parts support 1.35V + 0.0405V)
• Maximum CK/CK up to 2.25GHz
• Maximum WCK/WCK up to 4.5GHz
• Maximum data rate up to 9.0Gbps/pin
• Halogen free 170 Ball FBGA(RoHS Compliant)
• Single ended interface for data, address and command
• Quarter data-rate differential clock inputs CK/CK for ADD/CMD
• Two half data-rate differential clock inputs WCK/WCK,
each associated with two data bytes(DQ, DBI, EDC)
• Double Data Rate (DDR) data (WCK)
• Single data rate (SDR) command (CK)
• Double data rate (DDR) addressing (CK)
• 16 internal banks for concurrent operation
• 4 bank groups for tCCDL 3 tCK and 4 tCK
• 8n prefetch architecture: 256bit per array read or write access
• Burst length: 8 only
• Programmable CAS latency:
• Programmable write latency :
• WRITE Data mask function via address bus
(single/double byte mask)
• Data bus inversion(DBI) and address bus inversion(ABI)
• Input/output PLL on/off mode
• Address training: Address input monitoring by DQ pins
• WCK2CK clock training with phase information by EDC pins
• Data read and write training via READ FIFO
• READ FIFO pattern preload by LDFF command
• Direct write data load to READ FIFO by WRTR command
• Consecutive read of READ FIFO by RDTR command
• Read/Write data transmission integrity secured by cyclic
redundancy check ; CRC-8(X8+X2+X+1) for EDC
• Read/write EDC on/off mode
• Programmable EDC hold pattern for CDR
• Programmable CRC read latency(CRCRL) range 0 to 3 tCK
• Programmable CRC write latency(CRCWL) range 7 to 14 tCK
• Low Power modes
• RDQS mode on EDC pin
• Auto & self refresh modes
• Auto precharge option for each burst access
• 32ms, auto refresh (16K cycles)
• On-die termination (ODT)
; Nominal values of 60ohm and 120ohm
• Pseudo open drain(POD-15) compatible inputs and outputs
; 40ohm pull down, 60ohm pull up
• ODT and output driver strength auto-calibration with external
resistor ZQ pin(120ohm)
• Programmable termination and driver strength offsets
• Output driver strength adjustment by MRS
• Selectable external or internal VREF for data inputs
;Programmable offsets for internal VREF
• Separate external VREF for address / command inputsdmd
• Vendor ID, FIFO depth and Density info fields for identification
• X32/X16 mode configuration set at power-up with EDC pin
• 16bits support for vendor ID/Density/FIFO depth MRS
• Mirror function with MF pin
• Boundary scan function with SEN pin
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
BGA |
32360 |
SAMSUNG/三星全新特价K4G41325FE-HC25即刻询购立享优惠#长期有货 |
|||
SAMSUNG/三星 |
24+ |
BGA |
8552 |
只做原厂原装正品现货或订货假一赔十! |
|||
SAMSUNG/三星 |
2425+ |
BGA |
18800 |
只做原装正品,每一片都来自原厂 |
|||
SAMSUNG/三星 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
SAMSUNG |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
1822+ |
FBGA170 |
1120 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG |
23+ |
BGA |
2684 |
原厂原装正品 |
|||
SAMSUNG |
24+ |
BGA |
5000 |
全新原装正品,现货销售 |
|||
SAMSUNG |
16+ |
BGA |
4 |
原装 |
|||
SAMSUNG |
24+ |
BGA |
8000 |
新到现货,只做全新原装正品 |
K4G41325FE-HC25 资料下载更多...
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Datasheet数据表PDF页码索引
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