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IRFP9133中文资料
IRFP9133数据手册规格书PDF详情
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fsat switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliability
IRFP9133产品属性
- 类型
描述
- 型号
IRFP9133
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
P-CHANNEL POWER MOSFETS
更新时间:2025-8-16 14:00:00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-3PN |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
TO-3PN |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
2025+ |
TO-247 |
4675 |
全新原厂原装产品、公司现货销售 |
|||
IR |
23+ |
TO-3PN |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-3PN |
7000 |
||||
IR |
23+ |
TO-247AC |
19526 |
||||
IR |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
|||
IR |
05+ |
TO-247 |
1200 |
全新原装 绝对有货 |
|||
HARRIS |
24+ |
TO-3P |
77 |
||||
IR |
24+ |
原厂封装 |
661 |
原装现货假一罚十 |
IRFP9133 资料下载更多...
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SAMSUNG相关芯片制造商
Datasheet数据表PDF页码索引
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