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IRF9142中文资料
IRF9142数据手册规格书PDF详情
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fsat switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliability
IRF9142产品属性
- 类型
描述
- 型号
IRF9142
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
P-CHANNEL POWER MOSFETS
更新时间：2025-8-15 16:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
||||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
5000 |
专注配单,只做原装进口现货 |
||||
IR |
23+ |
5000 |
专注配单,只做原装进口现货 |
||||
IR |
23+ |
TO-3 |
7000 |
||||
Infineon(英飞凌) |
24+ |
TO204 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
25+ |
TO-3 |
2500 |
自家优势产品,欢迎来电咨询! |
|||
IR/MOT |
24+ |
TO-3 |
120 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-3 |
6500 |
全新原装假一赔十 |
IRF9142 资料下载更多...
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SAMSUNG相关芯片制造商
Datasheet数据表PDF页码索引
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