3.3GHz to 3.6GHz 2W POWER AMPLIFIER

Product Description RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an id

3.3-3.6GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with

3.3 - 3.6 GHz, 2 Watt Power Amplifier

3.3-3.6GHz 2W Power Amplifier

Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with

FLAT WASHERS NYLON FIBRE

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WASHERS

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Nylon Locknuts

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Silicone Cover Stranded-Core Wire - 50ft 30AWG Blue

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High Efficiency 1X/1.5X/2X Charge Pump for White LED Applications

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