SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

Features ● Complete Voltage Range 3.3 to 300 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Surface Mount Silicon Zener Diodes

VZ : 3.3 - 200 Volts PD : 1 Watt Features ♦ Complete Voltage Range 3.3 to 200 Volts ♦ High peak reverse power dissipation ♦ High reliability ♦ Low leakage current ♦ Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Complete Voltage Range 3.3 to 200 Volts

Features • Complete Voltage Range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current • RoHS compliant package

1W 18V Zener diode

文件：526.453 Kbytes Page：2 Pages

SURFACE MOUNT SILICON ZENER DIODES

文件：529.857 Kbytes Page：2 Pages

SURFACE MOUNT SILICON ZENER DIODES

文件：52.3 Kbytes Page：2 Pages

Surface Mount Zener diode

ZENER DIODES

文件：2.01679 Mbytes Page：14 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3