SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

Complete Voltage Range 3.3 to 200 Volts

Features • Complete Voltage Range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current • RoHS compliant package

Surface Mount Silicon Zener Diodes

VZ : 3.3 - 200 Volts PD : 1 Watt Features ♦ Complete Voltage Range 3.3 to 200 Volts ♦ High peak reverse power dissipation ♦ High reliability ♦ Low leakage current ♦ Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

SURFACE MOUNT SILICON ZENER DIODES

Features ● Complete Voltage Range 3.3 to 300 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

1W 13V Zener diode

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SURFACE MOUNT SILICON ZENER DIODES

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SURFACE MOUNT SILICON ZENER DIODES

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ZENER DIODES

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Surface Mount Zener diode

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.