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SY10EL11VZ价格
参考价格：￥9.4595
型号：SY10EL11VZG 品牌：Micrel 备注：这里有SY10EL11VZ多少钱，2025年最近7天走势，今日出价，今日竞价，SY10EL11VZ批发/采购报价，SY10EL11VZ行情走势销售排行榜，SY10EL11VZ报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 |   | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho | Micrel 麦瑞半导体 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC CLK BUFFER 1:2 8SOIC 集成电路（IC） 时钟缓冲器，驱动器 | Microchip 微芯科技 | | ||
5V/3.3V 1:2 Differential Fanout Buffer 文件：289.74 Kbytes Page：10 Pages | Micrel 麦瑞半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLK BUFFER 1:2 8SOIC 集成电路（IC） 时钟缓冲器，驱动器 | Microchip 微芯科技 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
5V/3.3V 1:2 Differential Fanout Buffer 文件：289.74 Kbytes Page：10 Pages | Micrel 麦瑞半导体 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
1:2 DIFFERENTIAL FANOUT BUFFER 文件：247.13 Kbytes Page：8 Pages | Micrel 麦瑞半导体 | | ||
ECL/PECL 1:2 Differential Fanout Buffer DESCRIPTION The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111, the EL11 is ideally suited for those applica | AZM | | ||
ECL/PECL 1:2 Differential Fanout Buffer [Arizona-Microtek] DESCRIPTION The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111, the EL11 is ideally suit | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
ECL/PECL 1:2 Differential Fanout Buffer DESCRIPTION The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111, the EL11 is ideally suited for those applica | AZM | | ||
ECL/PECL 1:2 Differential Fanout Buffer DESCRIPTION The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111, the EL11 is ideally suited for those applica | AZM | | ||
5.0 V ECL 1:2 Differential Fanout Buffer 文件：150.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | |
SY10EL11VZ产品属性
- 类型
描述
- 型号
SY10EL11VZ
- 功能描述
IC CLOCK FANOUT BUFFER
- 1
2 8SOIC
- RoHS
否
- 类别
集成电路(IC) >> 时钟/计时 - 时钟缓冲器，驱动器
- 系列
100EL, Precision Edge®
- 标准包装
1
- 系列
HiPerClockS™
- 类型
扇出缓冲器（分配），多路复用器
- 电路数
1 比率 -
- 2
18 差分 -
- 输出
是/无
- 输入
CML，LVCMOS，LVPECL，LVTTL，SSTL
- 输出
LVCMOS，LVTTL 频率 -
- 最大
250MHz
- 电源电压
2.375 V ~ 3.465 V
- 工作温度
0°C ~ 70°C
- 安装类型
表面贴装
- 封装/外壳
32-LQFP
- 供应商设备封装
32-TQFP（7x7）
- 包装
-
- 其它名称
800-1923-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MREL/麦瑞 |
24+ |
NA/ |
299 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SYNERGY |
2016+ |
SOP-8 |
3500 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
- |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Micrel |
23+ |
NA |
2748 |
专做原装正品,假一罚百! |
|||
MicrelInc |
25+23+ |
8-SOIC |
16152 |
绝对原装正品全新进口深圳现货 |
|||
Microchip |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
MICROCHIP/微芯 |
2406+ |
33600 |
诚信经营!进口原装!量大价优! |
||||
MICREL |
2025+ |
SOP-8 |
3665 |
全新原厂原装产品、公司现货销售 |
|||
SYNERGY |
24+ |
SOP-8 |
5850 |
进口原管环保 |
|||
MIC |
24+ |
SOP8P |
6868 |
原装现货,可开13%税票 |
SY10EL11VZ规格书下载地址
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- SY05-HF
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- SXXNF1
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- SXXND1
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- SXXHR6
- SXXHR55
- SXXHR41
- SXXHR26
- SXXHR20
- SXXHR16
- SXXHR14
- SXXHN6
- SXXHN55
- SXXHN41
- SXXHN26
- SXXHN20
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