| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SW2N60 | N-channel MOSFET (TO-220F , TO-220) General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i | SEMIPOWER 芯派科技 | ||
SW2N60 | N-channel MOSFET (TO-251 , TO-252) General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i | SEMIPOWER 芯派科技 | ||
SW2N60 | 600V N-channel MOSFET | SEMIPOWER 芯派科技 | ||
SW2N60 | This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. 文件:510.09 Kbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
N-channel I-PAK/D-PAK/TO220F MOSFET | SEMIPOWER 芯派科技 | |||
N-channel I-PAK/D-PAK/TO220F MOSFET 文件:767.41 Kbytes Page:6 Pages | SEMIPOWER 芯派科技 | |||
高压MOSFET | SEMIPOWER 芯派科技 | |||
N-channel Enhanced mode TO-252/TO-251 MOSFET 文件:598.73 Kbytes Page:6 Pages | SEMIPOWER 芯派科技 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件:271.17 Kbytes Page:10 Pages | MOTOROLA 摩托罗拉 |
SW2N60产品属性
- 类型
描述
- ID(A):
2.00(A)
- RDS(ON):
3.800(Ω)
- Qg(nC):
7.5nC
- Package:
TO-220F
- Type:
HV PLANAR
- Update:
2017-08-31
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SWMWIN |
25+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
SAMWIN |
22+ |
TO-220F |
20000 |
只做原装 品质保障 |
|||
SAMWIN |
2447 |
TO220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
芯源科技 |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
SWMWIN |
06+ |
TO-220 |
3195 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAM |
24+ |
TO220 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
S |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
SAMWIN/芯派 |
26+ |
TO-220 |
43600 |
全新原装现货,假一赔十 |
|||
SAMWIN |
23+ |
TO-251 |
403 |
全新原装正品现货,支持订货 |
|||
SAMWIN |
23+ |
to-251 |
50000 |
全新原装正品现货,支持订货 |
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SW2N60规格书下载地址
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DdatasheetPDF页码索引
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