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SW-124

SP4T RF Switch 10 - 1000 MHz

Features ● Low Loss – 0.6 dB Typical ● High Isolation – 60 dB Typical ● Integral TTL Driver ● Hermetic Package ● MIL-STD-883 Screening Available

MACOM

SP4T RF Switch 10 - 1000 MHz

Features ● Low Loss – 0.6 dB Typical ● High Isolation – 60 dB Typical ● Integral TTL Driver ● Hermetic Package ● MIL-STD-883 Screening Available

MACOM

SP4T RF Switch 10 - 1000 MH

● Low Loss – 0.6 dB Typical\n● High Isolation – 60 dB Typical\n● Integral TTL Driver\n● Hermetic Package\n● MIL-STD-883 Screening Available;

MACOM

SP4T RF Switch, 10 - 1000 MHz

• Low Loss: 0.6 dB Typical\n• High Isolation: 60 dB Typical\n• Integral TTL Driver\n• Hermetic Package\n• 50 Ohm Nominal Impedance\n• MIL-STD-883 Screening Available;

MACOM

SP4T RF Switch, 10 - 1000 MHz

Features • Low Loss: 0.6 dB Typical • High Isolation: 60 dB Typical • Integral TTL Driver • Hermetic Package • 50 Ohm Nominal Impedance • MIL-STD-883 Screening Available

MA-COM

SP4T RF Switch, 10 - 1000 MHz

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MACOM

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

ONSEMI

安森美半导体

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

NTE

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

PHILIPS

飞利浦

丝印代码:-05;PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

PHILIPS

飞利浦

SW-124产品属性

  • 类型

    描述

  • 型号

    SW-124

  • 制造商

    M/A-COM Technology Solutions

  • 功能描述

    SWITCH, SP4T, 10MHZ-1000MHZ, HERMETIC DIP PKG - Bulk

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