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SUT466N

Epitaxial planar PNP silicon transistor

Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW(Max.) • 2 PNP Chips in SOT-26 PKG

KODENSHI

可天士

SUT466N

Small Signal Transistors

AUK

Triple and Octal Channel Protectors

GENERAL DESCRIPTION The ADG466 and ADG467 are triple and octal channel protectors, respectively. The channel protector is placed in series with the signal path. The channel protector will protect sensitive components from voltage transience in the signal path whether the power supplies are presen

AD

亚德诺

Triple and Octal Channel Protectors

GENERAL DESCRIPTION The ADG466 and ADG467 are triple and octal channel protectors, respectively. The channel protector is placed in series with the signal path. The channel protector will protect sensitive components from voltage transience in the signal path whether the power supplies are presen

AD

亚德诺

Triple and Octal Channel Protectors

GENERAL DESCRIPTION The ADG466 and ADG467 are triple and octal channel protectors, respectively. The channel protector is placed in series with the signal path. The channel protector will protect sensitive components from voltage transience in the signal path whether the power supplies are presen

AD

亚德诺

Triple and Octal Channel Protectors

GENERAL DESCRIPTION The ADG466 and ADG467 are triple and octal channel protectors, respectively. The channel protector is placed in series with the signal path. The channel protector will protect sensitive components from voltage transience in the signal path whether the power supplies are presen

AD

亚德诺

Silicon N-Channel JFET Transistor Chopper, High Speed Switch

文件:21.64 Kbytes Page:2 Pages

NTE

SUT466N产品属性

  • 类型

    描述

  • Classifacation:

    Complex type

  • VCEO [V]:

    -40

  • IC[mA]:

    -600

  • PC[mW]:

    500

  • hFE_Min:

    100

  • hFE@ VCE [V]:

    -10

  • hFE@ IC[mA]:

    -10

  • VCE(sat) [V]_Max:

    -0.4

  • VCE(sat) [V]@ IC[mA]:

    -150

  • VCE(sat) [V]@ IB[mA]:

    -15

  • fT[MHz]_Min:

    200

  • fT[MHz]@ VCE [V]:

    -5

  • fT[MHz]@ IC[mA]:

    -20

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