Power Rectifiers, Ultra-fast Recovery

This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical t

Surface Mount Ultrafast Power Rectifiers

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封装/外壳：DO-214AB，SMC 包装：散装 描述：DIODE GEN PURP 200V 3A SMC 分立半导体产品 二极管 - 整流器 - 单

Power Rectifiers, Ultra-fast Recovery

This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical t

Power Rectifiers, Ultra-fast Recovery

This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical t

封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：DIODE GEN 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polari

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po