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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 50-V (D-S), 175C MOSFET

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 50-V (D-S), 175C MOSFET

文件:48.14 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 50-V (D-S), 175C MOSFET

文件:41 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL 50-V (D-S), 175 MOSFET

文件:255.8 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

'N-Channel 50-V (D-S), 175C MOSFET'

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

文件:998.18 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 55-V (D-S), 175C MOSFET

文件:78.47 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

TMOS POWER FET 75 AMPERES 50 VOLTS

HDTMOS E-FET™ High Enegy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount component

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS

HDTMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast rec

MOTOROLA

摩托罗拉

75A, 50V, 0.008 Ohm, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

INTERSIL

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件:75.94 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件:75.94 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SUP75N05产品属性

  • 类型

    描述

  • 型号

    SUP75N05

  • 功能描述

    MOSFET 50V 75A 250W

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-25 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUP-TECH
24+
FBP-02C
37279
郑重承诺只做原装进口现货
SUP-TECH
2023+
FBP-02C
10000
一级代理优势现货,全新正品直营店
SUP-TECH
13+
FBP-02C
880000
明嘉莱只做原装正品现货
VISHAY / SILICONIX
25+
50
公司优势库存 热卖中!
Vishay
17+
TO-220
6200
INFINEON
23+
SOP
5000
原装正品,假一罚十
VISHAY
24+
TO-220
8866
VISHAY(威世)
2447
TO-220(TO-220-3)
105000
500个/管一级代理专营品牌!原装正品,优势现货,长期
SILICONIX
24+
TO-220AB
6010
只做原装正品
VIS
18+
TO-220
187
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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