位置：首页 > IC中文资料第6344页 > SUB85N10-10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB85N10-10 | N-Channel100-V(D-S)175MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CMaximumJunctionTemperature | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
SUB85N10-10 | N-Channel100-V(D-S)175°CMOSFET 文件：104.42 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SUB85N10-10 | iscN-ChannelMOSFETTransistor 文件：298.02 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SUB85N10-10 | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.5116 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
SUB85N10-10 | N-Channel100-V(D-S)175째CMOSFET 文件：77.28 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
N-Channel100-V(D-S)175째CMOSFET 文件：77.28 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SUB85N10-10产品属性
- 类型
描述
- 型号
SUB85N10-10
- 功能描述
MOSFET 100V 85A 250W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
23+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
Vishay |
1822+ |
TO263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
23+ |
TO-263 |
19567 |
||||
VISHAY/威世 |
25+ |
TO-263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
06+ |
TO-263 |
5000 |
原装库存 |
||||
VISHAY |
24+ |
TO-263 |
8866 |
||||
VISHAY/威世 |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
VISHAY |
2025+ |
TO263 |
3685 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY/威世 |
24+ |
TO-263 |
501553 |
免费送样原盒原包现货一手渠道联系 |
|||
Vishay |
2024+ |
D2PAK(TO-263 |
50000 |
原装现货 |
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DdatasheetPDF页码索引
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