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STYN810

Discrete Thyristors(SCRs)

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ETCList of Unclassifed Manufacturers

未分类制造商

STYN810

晶闸管分立器件

SIRECTIFIER

矽莱克电子

晶闸管分立器件

SIRECTIFIER

矽莱克电子

Discrete Thyristors(SCRs)

文件:193.83 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

STYN810产品属性

  • 类型

    描述

  • ITVM(A):

    6.4

  • IT@TC(°C):

    100

  • VDRM/VRRM(V):

    800

  • ITSM 45°C/10ms(A):

    105

  • VTO(V):

    0.85

  • rT(mΩ):

    40

  • dv/dt(V/μs):

    200

  • TVJM(°C):

    125

  • RthJC per chip(K/W):

    1.90

  • 封装外形:

    TO-220AB

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