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STYN630

Discrete Thyristors(SCRs)

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STYN630

Thyristor Discretes (SCRs)

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SIRECTIFIER

矽莱克电子

STYN630

晶闸管分立器件

SIRECTIFIER

矽莱克电子

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

MOTOROLA

摩托罗拉

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: ● Low Forward Voltage ● High Current Capabil

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrad v

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

PANJIT

強茂

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

PANJIT

強茂

STYN630产品属性

  • 类型

    描述

  • ITVM(A):

    19

  • IT@TC(°C):

    85

  • VDRM/VRRM(V):

    600

  • ITSM 45°C/10ms(A):

    180

  • VTO(V):

    0.85

  • rT(mΩ):

    27

  • dv/dt(V/μs):

    500

  • TVJM(°C):

    125

  • RthJC per chip(K/W):

    1.0

  • 封装外形:

    TO-247AD

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