位置：首页 > IC中文资料第1266页 > STW5NB100
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW5NB100 | N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
STW5NB100 | N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
STW5NB100 | Trans MOSFET N-CH 1KV 4.3A 3-Pin(3+Tab) TO-247 | NJS | | |
N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supplies (SMPS) · High Current, High Speed Switching · DC-AC Converters for welding | ISC 无锡固电 | |
STW5NB100产品属性
- 类型
描述
- 型号
STW5NB100
- 制造商
STMicroelectronics
- 功能描述
MOSFET N TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
新 |
600 |
全新原装 货期两周 |
||||
24+ |
N/A |
5400 |
|||||
ST/意法 |
03+ |
TO-247 |
880000 |
明嘉莱只做原装正品现货 |
|||
ADI |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
24+ |
TO-247 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
ST |
NEW |
TO-247 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
|||
ST/意法 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
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STW5NB100规格书下载地址
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW48N60DM2
STW48N60DM2,当天发货0755-82732291全新原装现货或门市自取.
2020-10-25
DdatasheetPDF页码索引
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