N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

Isc N-Channel MOSFET Transistor

文件：417.73 Kbytes Page：2 Pages

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO-247封装

N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages

Features • Worldwide best RDS(on)*area amongst the silicon based devices • Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power M

N-channel 650 V, 0.056 廓 typ., 42 A, MDmesh??V Power MOSFET in a TO247-4 package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO247-4封装

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching appli

isc N-Channel MOSFET Transistor

文件：263.44 Kbytes Page：2 Pages