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STW26NM60ND价格
参考价格：￥22.7027
型号：STW26NM60ND 品牌：STMicroelectronics 备注：这里有STW26NM60ND多少钱，2024年最近7天走势，今日出价，今日竞价，STW26NM60ND批发/采购报价，STW26NM60ND行情走势销售排行榜，STW26NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW26NM60ND | Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STW26NM60ND | iscN-ChannelMOSFETTransistor 文件：398.58 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STW26NM60ND产品属性
- 类型
描述
- 型号
STW26NM60ND
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A TO247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
22+ |
N |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ST |
23+ |
TO-247-3 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST/意法 |
2022+ |
TO-247 |
8000 |
只做原装支持实单,有单必成。 |
|||
ST/意法 |
23+ |
T0-247 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ST |
TO-247-3 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法 |
21+ |
T0-247 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ST/意法 |
22+ |
TO-247 |
34137 |
只做原装进口现货 |
|||
ST |
22+ |
TO-247-3 |
16900 |
正规渠道,只有原装! |
|||
ST-意法半导体 |
24+25+/26+27+ |
TO-247-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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DdatasheetPDF页码索引
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