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STW26NM60ND价格
参考价格：￥22.7027
型号：STW26NM60ND 品牌：STMicroelectronics 备注：这里有STW26NM60ND多少钱，2025年最近7天走势，今日出价，今日竞价，STW26NM60ND批发/采购报价，STW26NM60ND行情走势销售排行榜，STW26NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW26NM60ND | Low input capacitance and gate charge Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STW26NM60ND | isc N-Channel MOSFET Transistor 文件：398.58 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
isc N-Channel MOSFET Transistor DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=20A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=21A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Low input capacitance and gate charge Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STW26NM60ND产品属性
- 类型
描述
- 型号
STW26NM60ND
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A TO247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-247 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
23+ |
TO-247-3 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
24+ |
TO-247 |
30000 |
代理原装现货,价格优势。 |
|||
ST |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST/意法 |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
ST/意法 |
24+ |
TO-247 |
39197 |
郑重承诺只做原装进口现货 |
|||
ST/意法 |
23+ |
TO247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST/意法 |
2022+ |
TO-247 |
8000 |
只做原装支持实单,有单必成。 |
|||
ST |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
24+ |
TO-247 |
6000 |
只做原装，欢迎询价，量大价优 |
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DdatasheetPDF页码索引
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