型号 功能描述 生产厂家&企业 LOGO 操作
STW21NM60N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STW21NM60N

N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件:562.69 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

STW21NM60N

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

文件:672.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件:559.02 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件:559.02 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件:407.25 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件:562.69 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件:559.02 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件:562.69 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

文件:672.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STW21NM60N产品属性

  • 类型

    描述

  • 型号

    STW21NM60N

  • 功能描述

    MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-7 10:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-247
65400
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
2022+
TO-247-3
6900
原厂原装,假一罚十
ST
18+
TO-247
85600
保证进口原装可开17%增值税发票
ST/意法半导体
2023+
TO-247-3
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
ST/意法半导体
24+
TO-247-3
30000
原装正品公司现货,假一赔十!
ST
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!
ST
21+
TO-3P
12588
原装现货价格优势
ST
23+
TO-247
8795
ST
17+
TO-247
26791
进口原管现货/30

STW21NM60N数据表相关新闻