High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds. Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum

封装/外壳：TO-247-3 包装：散装 描述：TRANS NPN 400V 12A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

NPN SILICON POWER TRANSISTOR

SWITCHMODE™ Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, S

POWER TRANSISTORS(12A,300-400V,100W)

SWITCHMODE SERIES NPN POWER TRANSISTORS 12 AMPERE TRANSISTOR 300-400 VOLTS 100 WATTS

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Sol

SILICON NPN SWITCHING TRANSISTOR

DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. ■ SGS-THOMSON PREFERRED SALESTYPE

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.