位置：首页 > IC中文资料第51页 > STW12NA60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW12NA60 | fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
STW12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | |
STW12NA60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
STW12NA60产品属性
- 类型
描述
- 型号
STW12NA60
- 功能描述
MOSFET REORD 511-STW13NB60 TO-247 N-CH 500V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
468 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
25+ |
TO-247 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
23+ |
TO-247 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
|||
ST |
06+ |
TO-247 |
2380 |
原装 |
|||
24+ |
N/A |
2000 |
|||||
ST |
NEW |
TO-247 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
2511 |
TO-3P |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST/意法 |
23+ |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
STW12NA60规格书下载地址
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