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STU5N62K3价格
参考价格：￥4.2786
型号：STU5N62K3 品牌：STMICROELECTRONICS 备注：这里有STU5N62K3多少钱，2025年最近7天走势，今日出价，今日竞价，STU5N62K3批发/采购报价，STU5N62K3行情走势销售排行榜，STU5N62K3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STU5N62K3 | N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 |   | |
STU5N62K3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STU5N62K3 | N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package | STMICROELECTRONICS 意法半导体 | | |
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10806 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.10908 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STU5N62K3产品属性
- 类型
描述
- 型号
STU5N62K3
- 功能描述
MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
22+ |
I-PAK |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
25+ |
TO-251 |
32000 |
ST/意法全新特价STU5N62K3即刻询购立享优惠#长期有货 |
|||
ST/意法 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST/意法 |
22+ |
TO220 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST/意法 |
2022+ |
I-PAK |
8000 |
只做原装支持实单,有单必成。 |
|||
ST/意法 |
22+ |
N/A |
20850 |
现货,原厂原装假一罚十! |
|||
ST |
25+23+ |
TO220 |
19296 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
STN |
2526+ |
原厂封装 |
2975 |
只做原装优势现货库存 渠道可追溯 |
STU5N62K3规格书下载地址
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