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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STU11NM60ND | N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi | STMICROELECTRONICS 意法半导体 | ||
STU11NM60ND | N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK 文件:756.46 Kbytes Page:19 Pages | STMICROELECTRONICS 意法半导体 | ||
STU11NM60ND | isc N-Channel MOSFET Transistor 文件:332.92 Kbytes Page:2 Pages | ISC 无锡固电 | ||
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.032609 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET 文件:357.14 Kbytes Page:16 Pages | STMICROELECTRONICS 意法半导体 |
STU11NM60ND产品属性
- 类型
描述
- 型号
STU11NM60ND
- 功能描述
MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMHOP |
24+ |
SOPDIP |
40933 |
原装进口现货假一赔百 |
|||
ST |
22+ |
TO-251 |
25000 |
只做原装进口现货,专注配单 |
|||
SAMHOP/三合微科 |
2021+ |
SOPDIP |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMHOP |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
SAMHOP |
07+ |
TO-252 |
863 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
23+ |
IPAKTO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
12+ |
TO-251 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
SAMHOP/三合微科 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
STU11NM60ND规格书下载地址
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