TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

Turbo 2 ultrafast high voltage rectifier

文件：145.38 Kbytes Page：10 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT） 描述：DIODE GEN PURP 600V 5A DPAK 分立半导体产品 二极管 - 整流器 - 单

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

Turbo 2 ultrafast high voltage rectifier

文件：145.38 Kbytes Page：10 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT） 描述：DIODE GEN PURP 600V 5A DPAK 分立半导体产品 二极管 - 整流器 - 单

SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：276.8 Kbytes Page：4 Pages