Turbo 2 ultrafast - high voltage rectifier

Description The STTH506 uses ST Turbo2 600V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switchin

Tandem 600V HYPERFAST BOOST DIODE

FEATURES n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES

600 V、5 A串联超高速升压二极管

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • Package Capacitance: C=7pF \n• ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS \n• INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES \n• DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO C;

封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

丝印代码：STTH506DTI；Tandem 600V HYPERFAST BOOST DIODE

FEATURES n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES

Tandem 600V HYPERFAST BOOST DIODE

DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHIN

封装/外壳：TO-220-2 绝缘，TO-220AC 包装：管件 描述：DIODE GEN PURP 600V 5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

Numeric Display

Numeric Display 14.4 mm (.6”) Series

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers .. . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability and Uniformity

Silicon Rectifier Diode

Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications.

SCHOTTKY BARRIER RECTIFIERS(5.0A,20-60V)