Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

1200 V，12 A超高速二极管

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.\n\n Such demanding applications include industrial • Ultrafast, soft recovery \n• High frequency and/or high pulsed current operation \n• Very low conduction and switching losses \n• High junction temperature \n• High reverse voltage capability;

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast Recovery Diode

FEATURES · Very Low Conduction and Switching Losses · Ultrafast, Soft Recovery · High Reverse Voltage Capability APPLICATIONS · Industrial Power Supplies · Motor Control

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE GEN PURP 1.2KV 12A D2PAK 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE GEN PURP 1.2KV 12A D2PAK 分立半导体产品 二极管 - 整流器 - 单

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.