Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

1000 V，12 A超高速二极管

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.\n\n Such demanding applications include industrial • Insulated packages:\t\tTO-220Ins Electrical insulation = 2500 VRMSCapacitance = 7 pF\t\tTO-220FPAC Electrical insulation = 2500 VRMSCapacitance = 12 pF\t\t \n• Ultrafast, soft recovery \n• High frequency and/or high pulsed current operation \n• Very low conduction and switching losses \n• High jun;

Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast Recovery Diode

DESCRIPTION · Ultrafast, Soft Recovery · High Reverse Voltage Capability · High Junction Temperature APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS)

Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

Ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Features and benefits ■ Ultrafast

汽车级1000 V、12 A超高速二极管

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability, like automotive applications.\n\n These diodes als • AEC-Q101 qualified \n• Ultrafast, soft recovery \n• Very low conduction and switching losses \n• High frequency and high pulsed current operation \n• High reverse voltage capability \n• High junction temperature;

Automotive ultrafast recovery - high voltage diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability, like automotive applications. Feat

封装/外壳：TO-220-2 绝缘，TO-220AC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1KV 12A TO220INS 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：管件 描述：DIODE GEN PURP 1KV 12A TO220AC 分立半导体产品 二极管 - 整流器 - 单

Integrated Circuit Preamp w/ALC

Description: The NTE1210 is a low–noise, high–gain preamplifier with a built–in ALC (automatic level control) circuit in a 9–Lead SIP type package designed for use as a record/playback preamp in cassette tape recorders. Features: • Wide ALC Range • Wide Range of Working Power Supply

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

12-Bit, uP Compatible, Double-Buffered D to A Converters

文件：361.79 Kbytes Page：18 Pages

12-Bit, uP Compatible, Double-Buffered D to A Converters

文件：361.79 Kbytes Page：18 Pages

Clock For 1/2 Duty VFD

文件：141.09 Kbytes Page：11 Pages