Ultrafast diode 200V, dual 5A

The STTH1002CSF has been developed for applications requiring an optimized VF and reverse recovery characteristics.\n\n These characteristics make it ideal for use in secondary rectification functions, such as DC/DC converters or lighting applications. • 175 °C maximum operation junction temperature \n• High surge current capability \n• ECOPACK2 compliant component;

丝印代码：TH1002C；200 V, dual 5 A ultrafast rectifier

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封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：ULTRAFAST DIODE 200V, DUAL 5A 分立半导体产品 二极管 - 整流器 - 阵列

Automotive 200V, dual 5A ultrafast diode

The STTH1002CSFY has been developed for applications requiring an optimized VF and reverse recovery characteristics.\n\n These characteristics make it ideal for use in secondary rectification functions, such as DC/DC converters or lighting applications. • AEC-Q101 qualified \n• PPAP capable \n• 175 °C maximum operation junction temperature \n• VRRM guaranteed from -40 °C to 175 °C \n• High surge current capability \n• ECOPACK2 compliant component;

封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：AUTOMOTIVE 200V, DUAL 5A ULTRAFA 分立半导体产品 二极管 - 整流器 - 阵列

丝印代码：T1002CY；Automotive 200 V, dual 5 A ultrafast rectifier

文件：334.8 Kbytes Page：10 Pages

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp